We report fabrication and measurements of single-layer SnSe2/chemical vapor deposition (CVD) graphene/hexagonal boron nitride (h-BN) field-effect device. The coherent magnetotransport properties of such a hybrid system are systematically studied so as to obtain a good understanding of the structure which may find potential applications in thermoelectricity, flexible electronics, quantum coherent sensor as well as stress sensing. We observed weak localization well described by the Hikami-Larkin-Nagaoka model and the phase coherence length is around 540 nm for V BG = \u221220 V at 1 K. The phase coherence length could be effectively changed by controlling the temperature and gate voltage. We also obtain good field-effect dependent properties of atomic-scale SnSe2 ultrathin film/graphene system. Given the current challenges in tuning single-layer SnSe2/CVD graphene on h-BN with a suitable dielectric layer, our results suggest the potential of quantum coherent effect, an effective way for development of future quantum nano-switch device.
Phase Coherence Length Field-effect Device Applications In Thermoelectricity Weak Localization Boron Nitride Flexible Electronics Current Challenges Hybrid System Gate Voltage Vapor Deposition
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Round-ups are the summaries of handpicked papers around trending topics published every week. These would enable you to scan through a collection of papers and decide if the paper is relevant to you before actually investing time into reading it.
Climate change Research Articles published between Sep 12, 2022 to Sep 18, 2022
Sep 19, 2022
Articles Included: 5
Rainfall projections from the Coupled Model Intercomparison Project (CMIP) models are strongly tied to projected sea surface temperature (SST) spatial...Read More
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