Abstract
This work reports a systematic study on the tuning of the insulator–metal transition temperature (TIMT) of VO2 thin films as well as their metastable phases by doping the films with Cr under different oxygen pressures. At a low oxygen pressure, TIMT decreases from 69 to 34 °C when increasing the Cr concentration in VO2 from 0 to 10%. At a higher oxygen pressure, TIMT is enhanced from 72 to 90 °C with the same Cr concentration. This combined effect of Cr doping and oxygen pressure yields the structural stabilization of metastable (triclinic, T, monoclinic, M* and M2) phases of VO2 thin film at room temperature, as observed by x-ray diffraction (XRD) and Raman measurements. X-ray photoelectron spectroscopy (XPS) measurements confirm the presence of V3+ in the low oxygen pressure stabilized phases – T and M*, while the atomic force microscopy (AFM) images show changes in film roughness. A comparison of the volume fraction monoclinic phases, determined from resistivity and infrared transmission measurements, evidenced the signature of percolation in VO2. Our experimental approach provides a deeper understanding of the phase stability of VO2 films and a new perspective to tuning the IMT over a large scale as needed for technological applications.
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