Abstract
Atomically thin tungsten diselenide (WSe2) has emerged as a promising material for next-generation electronic and optoelectronic devices. The surface functionalization of molybdenum trioxide (MoO3) improves the performance of WSe2 FET. The strong hole doping from MoO3 to WSe2 was revealed by measuring the electrical properties of the FET and calculating the electron mobility of WSe2 devices. We demonstrated effective P doping of MoO3 on WSe2 FET devices, and the hole mobility of WSe2 FET devices was improved by 3 orders of magnitude after contact doping with MoO3 at 3.2nm.
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