Abstract
Ionic-liquid gated multi-layer MoS2 field-effect transistors were fabricated and their electrical properties related to maximum depletion depth, bulk neutral and surface accumulation conduction were investigated in detail. A negative back-gate bias resulted in a depletion of the bulk neutral channel at the bottom interface, which significantly enhanced transistor performance in terms of the on-current to off-current (Ion/Ioff) ratio and the off-state current level. The experimental results were verified by numerical simulations and analytical equations. These findings are critical for the optimization of the Ion/Ioff ratio of multi-layer MoS2 transistors for energy efficient electronics and low power applications.
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