Tuning the Mechanical Properties of SiO2 Thin Film for MEMS Application

Abstract

ABSTRACTThis study reported a novel method for tuning thin film mechanical properties by means of plasma surface modification. In order to demonstrate the feasibility of this approach, various plasma treatments, including O2, H2, NH3 atmospheres, were implemented to tune the Young's modulus and residual stress of SiO2 film. Without plasma treatment, the static tip deflection of 200μm long SiO2 cantilever was 9.01μm. After treatment with H2, O2, and NH3 plasma, the tip deformation of the treated cantilevers became 10.22μm, 8.28μm, and -6.84μm respectively. The Young's modulus of the SiO2 cantilever without plasma treatment was 76.3GPa. After treated with H2, O2, NH3 plasma, the Young's modului of those treated cantilevers became 70.8 GPa, 74.7 GPa, and 71.4 GPa, respectively. Hence, after H2 and NH3 plasma treatment, the equivalent elastic modulus of SiO2 cantilever could be reduced about 7%.