Abstract
The emission directionality of stacks of coupled quantum dots (QDs) is investigated within the framework of 8-band k·p-theory including strain and strain-induced piezoelectricity up to second order. Using an artificial cuboidal QD, we show that the degree of radiation anisotropy can be tuned from −33% to nearly +60% via the structure’s vertical aspect ratio. We then demonstrate that these findings can be transferred to stacked InGaAs QDs whose emission directionality is tailored (i) via the interdot coupling strength given by the separating barrier width and (ii) the number of stacked QDs. Our results enable the design and optimization of top and edge emitters based on stacked QDs.
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