Abstract
Two dimensional (2D) ferroelectric heterostructures with tunable electronic properties show many novel physical properties, which have gradually aroused great interest. Herein, based on first-principle calculations, we present a comprehensive research on the electronic properties of InSe/In2Se3 ferroelectric van der Waals heterostructures with and without strains. We have obtained the most stable stack configuration of the heterostructure. Under a certain strain, the pure electric field can control the change of semiconductor types and the transition between direct and indirect band gap. In addition, we found that the built-in electric field served by ferroelectric polarization makes the InSe/In2Se3 heterostructure have higher light absorption than monolayer InSe and In2Se3. Our results show that InSe/In2Se3 heterostructure may have great potential applications in electronic and optoelectronic devices or other fields.
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