Abstract
In this paper, we examine the tunability of the effective bandgap and carrier concentration in a silicon-doping superlattice with narrow n+-doped layers and wide p-doped layers. Quantitative tunability parameters are defined and their variation with dopant concentration and temperature are calculated self-consistently in the effective mass and Hartree approximations. It is found that the tunabilities increase as doping is increased or as temperature is decreased.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have