Abstract
Indium Selenide (InSe) has attracted widespread attention due to its excellent optoelectronic properties. Band-gap engineering provides opportunities for the application of InSe materials in the field of optoelectronics. Herein, the substitution of dopant Te atoms for Se atoms in the InSe monolayers was investigated. It was found that substitutional doping can provide an effective way to adjust the electronic structure and improve the performance of InSe monolayer semiconductor. Accordingly, increasing the concentration of the Te dopant brings a transition from the indirect to the direct band gap. Specifically, the transition occurs when the Te concentration is around 33%. With the gradual increase of the Te concentration, the band gap increased initially and then decreased. The band gap reached a maximum of 1.64 eV at a Te concentration of 33.3% and then gradually decreased to 1.08 eV beyond the maximum dopant concentration. These results showcase the controllable and changeable band gap of the InSe semiconductor and open up a new way for the potential application of InSe as a competent candidate in optoelectronic devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
