Abstract

Bismuth ferrite is a potentially interesting lead-free piezoelectric material for use in high-temperature applications due to its high Curie temperature. However, the high coercive field and high leakage currents of pure BiFeO3 (BFO) prevent reaching its theoretical performance level. The classic approach to tailoring piezoceramic properties to their desired use conditions is the use of doping. In this work, we produce bulk BFO piezoceramic by the conventional sintering method with single element doping with cobalt (0.125–3 at. %) or titanium (1–5 at. %) and dual doping (Co and Ti added simultaneously). Cobalt doping reduces the required field for poling and also increases the leakage currents. Titanium doping reduces the leakage currents but destroys the piezoelectric properties as the coercive field strength cannot be reached. However, when both elements are used simultaneously at their appropriate levels (0.25 at. % each), a piezoelectric ceramic material is obtained, requiring a low field for full poling (9 kV/mm) and showing excellent room temperature performance such as a d33 = 40 pC/N, a dielectric constant in the region of 100 and dielectric losses less than 1%.

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