Abstract
A correlation between the electronic structure and magnetic properties of ZnO single crystals (ZnO SCs) and 300 keV xenon ion (Xe3+) implanted ZnO SCs has been studied using x-ray absorption near edge structure (XANES) spectroscopy, valence band photoemission spectroscopy (VB-PES), x-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and a superconducting quantum interference device-type magnetometer. The XANES studies revealed that the number of unoccupied p-states in the implanted ZnO SCs is higher than in the pristine ZnO SCs. In the implanted ZnO SCs, the binding energy of the Zn 2p3/2 core level peak shifted to higher energy which further confirmed the increase in the valence band maximum (VBM) energy level. The VBM of the xenon ion (Xe3+) implanted ZnO SCs increased from 3.17–3.49 eV, obtained from UPS (He-I) measurements. A VB-PES study revealed that the number of electrons in the valence band of the O 2p–Zn 4sp hybridized states of the implanted ZnO SCs is higher than in the pristine ZnO SCs. The magnetic M–H loops demonstrated enhanced room temperature ferromagnetism in the Xe implanted ZnO SCs, attributable to the increasing number of surface defects and native defect sites in oxygen vacancies and zinc interstitials.
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