Abstract
We propose a method for treating the boundary conditions at the exposed surface of semiconductor nanostructures, and compare the results from simulations based on such a method with experimental measurements on test devices defined electrostatically by metal gates on AlGaAs/GaAs heterostructures. In particular, we show that the pinch-off voltage of quantum point contacts realized with split gates can be reasonably reproduced, provided the lithographic gap is small enough.
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