Abstract
Single phase CoFe2O4 thin films are deposited on quartz substrates at 400 °C using ultrasonic assisted chemical vapor deposition, and the tuning of optical bandgap and saturation magnetization of films is demonstrated by varying the post deposition annealing temperature. The optical band gap varies from 1.58 to 1.41 eV and saturation magnetization increases from 4 to 46 emu/g as the post deposition annealing temperature is increased from 500 °C to 700 °C. The observed change in optical bandgap and the magnetic properties is attributed of the shifting of Co2+ from the octahedral to the tetrahedral site with the increase in the annealing temperature. Raman studies of the films support the redistribution of Co2+ among the octahedral and tetrahedral sites in CoFe2O4 films with the increase in the annealing temperature.
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