Tuning of memory effect with magnetic field of Ni and Co-doped ferrite-PbZr0.58Ti0.42O3 nanocomposite

Abstract

The magnetoelectric nanocomposite Ni0.5Co0.5Fe2O4-PbZr0.58Ti0.42O3, having a weight ratio of 3:7, has been fabricated through a low temperature “Pyrophoric reaction process”. The structural and surface characterizations of the composite have been established by the X-ray diffraction technique and scanning electron micrographs, respectively. The magnetic field dependent electrical memory effect has been examined by the study of direct current electrical characterization of the composite at room temperature. In an applied magnetic field, the open circuit current increases by 21 % at room temperature. The current versus voltage characteristic of the nanocomposite expresses non-Ohmic behavior and follows the Child’s Law. For alignment of the magnetic dipoles of the piezo-magnetic phase of the magnetoelectric composite with a space charge effect, the current increases with the applied magnetic field, where the maximum change is found to be ∼28 % in the measured range. The maximum value of the magneto-capacitance has been noted as ∼5 % for the low frequency region.