Tuning of electronic properties of chemical vapor deposition grown graphene via self-assembled monolayer doping

Abstract

The tuning of charge carriers in graphene is essential for its realization as high-performance electrode in various electronic and optoelectronic devices. In this study, we used chemical doping approach to alter the electronic properties of chemical vapor deposition (CVD) grown single-layer graphene (SLG) via coating of octadecyltrimethoxysilane (OTS) self-assembled monolayer (SAM). Raman spectra and electrical measurements showed that the OTS treatment on SLG induces p-type doping. The Raman peaks positions and the values of I2D/IG were examined for pristine and OTS doped graphene, which revealed the charge transfer from graphene to OTS molecules. The electrical characterization demonstrated that the OTS treatment can significantly shift the charge neutrality point towards the right side, which confirmed the p-type doping. This study suggests that the electronic properties of CVD-grown graphene could be modulated by OTS treatment and provides a promising idea for the development of graphene-based electronic devices.