Abstract
Current-induced effective magnetic fields offer a new pathway through spin orbit interaction (SOI) to switch magnetization and have recently attracted great interest. In the conventional heavy metal/ferromagnetic metal/oxide (HM/FM/Oxide) structure, significant efforts have been made to study the role of the HM in determining effective magnetic fields. However, very little attention has been paid to the oxide layer and its interface with FM, where the Rashba effect may affect the effective field. In this report, we present a pathway to tune the effective magnetic field by engineering the Rashba effect in a hybrid multiferroic multilayer structure. A ferroelectric oxide of BaTiO3, whose polarizations either up or down are controlled by interface engineering, was introduced into the conventional SOI multilayer with the structure of BaTiO3/CoFeB/Pt. The current-induced effective magnetic fields increase by more than 200% when the ferroelectric polarization of BaTiO3 changes from up to down. The changes in the effective magnetic field are mainly attributed to the different Rashba effective fields induced by the opposite ferroelectric polarizations. Our study offers a new path towards controlling the current-induced effective magnetic field and may pave the way for integrating other functional oxides into the spintronic devices.
Highlights
Spintronics is regarded as an alternative solution beyond CMOS technology to achieve scalable and low energy-consumption electronics[1], where the electrical manipulation of the magnetization is the most desirable
As demonstrated above, the different magnetic anisotropies, effective magnetic fields, and switching efficiencies between BTO↓ and BTO↑ confirm that the ferroelectric polarization in the BTO/CoFeB hybrid multiferroic can be used to modulate the current-induced magnetization switching
It is commonly considered that spin Hall effect (SHE), the spin memory loss/spin transparency[32,36,37], and the Rashba effect play main roles in the effective magnetic field of the Spin−orbit torque (SOT)-based magnetization switching
Summary
Spintronics is regarded as an alternative solution beyond CMOS technology to achieve scalable and low energy-consumption electronics[1], where the electrical manipulation of the magnetization is the most desirable. Spin−orbit torque (SOT) offers such a way to achieve current-induced magnetization switching[2,3,4]. In contrast to the conventional spin-transfer torque, which originates or a structure with inversion asymmetry by the interfacial spin orbit coupling such as the Rashba effect. The current-induced SOT consists of an antidamping torque and a field-like torque represented by the equivalent effective longitudinal magnetic field HL and transverse magnetic field HT, respectively. The most sought-after structure for achieving the magnetization switching by SOT far consists of an ultrathin ferromagnetic film (FM) sandwiched between a heavy metal (HM) and an oxide layer[2,3], i.e., HM/FM/. Both the SHE and Rashba effect, where the SHE comes from the HM while the Rashba effect is ascribed to
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
