Abstract
Within this study a series of MoNbTaWZr thin films were synthesized using high power impulse magnetron sputtering (HiPIMS) with varying the deposition parameters: duty cycle from 0.5 to 100 % (i.e. DC magnetron sputtering (DCMS)), Ar pressure from 0.5 to 3 Pa and pulse frequency from 25 to 200 Hz. The structure of the deposited films was analyzed by X-ray diffraction and scanning and transmission electron microscopy. In addition, the electrical resistivity and the residual stress of the films was determined. The influence of the deposition parameter variation on structure and properties of the MoNbTaWZr films is discussed on the established framework of film growth conditions achievable with HiPIMS and DCMS and how they can be influenced by adapting the deposition parameters. The performed work is intended to contribute to a comprehensive understanding about synthesis-structure-property relations for refractory high entropy alloy thin films while using MoNbTaWZr films as a model system.
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