Abstract
We report on effects of pulsing frequency and annealing temperature on structural and electro-optical properties of thin indium-tin-oxide (ITO) films prepared by pulsed dc magnetron sputtering technique. Phase analysis shows that as-deposited ITO films belong to crystalline bixbyite structure with (400) preferred orientation. Optical transmittance of greater than 87 % is obtained in the visible range. This is followed by a clear shift in the absorption edge towards higher energy region which is indicative of a lower defect density near the band edge. The lowest resistivity value of 4.47 × 10−4 Ω-cm and the highest carrier concentration of 1 × 1021 cm−3 are achieved by annealing the films at 523 K in air. Variations in the energy band gap and resistivity of ITO films may be attributed to Sn doping and oxygen vacancies, which act as donors. The correlation between the deposition parameters and the film properties are discussed.
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