Tuning electrical properties of BaTiO3 with iron modification

Abstract

BaTiO3 plays an important role in advanced functional devices owing to its fascinating properties. Though it is an excellent ferroelectric material, its magnetism can be switchable via suitable modification. In this report, we have studied iron-modified BaTiO3, which has been prepared using cost-effective high-temperature solid-state reaction techniques. The Fe-modified BaTiO3 maintains its crystallinity in the tetragonal phase with P4mm space group with a slight variation of tetragonality ratio to 1.002 from 1.008 of BaTiO3 of the identical synthesis method. This is confirmed by Rietveld refinement. Field emission scanning electron microscopy (FESEM) and EDX (energy dispersive X-rays) spectrum along with an elemental mapping analysis has provided the feature of the Fe-modifed BaTiO3. Atomic force microscope (AFM) has been employed to get the detailed surface topology (2D and 3D) and surface roughness of the developed systems. This deformation caused by the incorporation of Fe significantly modifies the electrical properties of barium titanate. The ferroelectric-paraelectric phase transition temperature (Tc) of Fe-modified BaTiO3 has been diffused and shifted to 300 °C from 120 °C of pure BaTiO3, suggesting the materials for the high-temperature capacitive application. The room temperature M-H hysteresis of Fe-modified BaTiO3 indicates the ferromagnetism developed in the BaTiO3 with the introduction of Fe. The ac conductivity is in the order of 10−4 Ω−1cm−1, and its frequency response obeys Jonscher's power law. Different charge carriers are responsible for diverse conduction processes in different temperature ranges confirmed by the Arrhenius plot. Impedance spectroscopy studies reveal the existence of NTCR characteristics of the developed system. Well defined ferroelectric hysteresis loop indicates the existence of ferroelectricity in the developed system. The analysis of various electrical parameters has provided information on the material's dielectric relaxation and conduction mechanisms for possible application in functional devices.