Tuning Confined States and Valley G‐Factors by Quantum Dot Design in Bilayer Graphene

Abstract

Electrostatically confined quantum dots in bilayer graphene have shown potential as building blocks for quantum technologies. To operate the dots, e.g., as qubits, a precise understanding and control of the confined states and their properties is required. Herein, a large‐scale numerical characterization of confined quantum states in bilayer graphene dots is performed over an extensive range of gate‐tunable parameters such as the dot size, depth, shape, and the bilayer graphene gap. The dot states’ orbital degeneracy, wave function distribution, and valley g‐factor are established and the parametric dependencies to achieve different regimes are provided. It is found that the dot states are highly susceptible to gate‐dependent confinement and material parameters, enabling efficient tuning of confined states and valley g‐factor modulation by quantum dot design.