Tuning 3C-SiC(100)/Si(100) Heterostructure Interface Quality

Abstract

We report a systematic spectroscopic and structural investigation of 3C-silicon carbide (3C-SiC) films grown on Si(100)-(2 × 1) by codeposition of C60 molecules and Si atoms in ultrahigh-vacuum conditions. This work focuses on reducing the macroscopic defects formed at the interface in Si-SiC heterojunctions. A wide range of parameters influence the growth process, including the substrate deposition temperature, the relative effusion fluxes of C60 and Si, and the clean Si(100) surface order. By adjusting the Si and C60 deposition rates, it is possible to reduce the Si atom diffusion from the substrate and control both the surface morphology and the specific formation of the C-rich c(2 × 2) or Si-rich 3 × 2 ordered surfaces. Our results show that the growth of 3C-SiC on flat and good quality Si substrates is a crucial and necessary starting point to obtaining good quality 3C-SiC/Si interfaces with a minimum number of defects.