Abstract
As the dimensions of middle-of-line (MOL) contacts shrink, the tungsten (W) gap-filling capability becomes more critical to eliminate function failure in SRAM and logic circuit caused by W-voids. The formation of W-voids is generally related to contact profile, barrier (Ti/TiN) property and W-plug deposition method. The barrier layer may be degraded due to out-gassing from polymer residues underneath which prevent robust CVD W fill and leads to W void issue. In this paper, the impact of post-deposition plasma treatment of the underlying MOCVD-TiN barrier on the subsequent W gapfilling behavior and contact resistance was systematically investigated. Results show that the optimized plasma treatment of the barrier layer can reduce out-gassing during the subsequent W deposition, thus achieve better gapfilling capability and minize W-voids.
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