Abstract
The interphase boundary formed in the process of tungsten thin-film deposition on a silicon wafer is investigated. These films are produced via (1) a CVD technique relying on hydrogen reduction of tungsten hexafluoride, (2) the same technique supplemented with plasmochemical action, and (3) magnetron deposition used for comparison purposes. It is shown that a nanometer tungsten silicide W5Si3 layer is formed at the tungsten-silicon interface only under gas-phase deposition. The effect of annealing on the specimen composition and surface resistance is investigated. It is shown that the formation and growth of a silicide WSi2 layer commences at 700°C for CVD films and at above 750°C for films obtained with plasmochemical deposition; this results in a drastic increase in their electrical resistance. Under optimal conditions, tungsten films of 8 × 10 −6 Ω cm resistivity are produced.
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