Abstract
Perovskite solar cells (PSCs) have attracted tremendous research attention due to their potential as a next-generation photovoltaic cell. Transition metal oxides in N–I–P structures have been widely used as electron-transporting materials but the need for a high-temperature sintering step is incompatible with flexible substrate materials and perovskite materials which cannot withstand elevated temperatures. In this work, novel metal oxides prepared by sputtering deposition were investigated as electron-transport layers in planar PSCs with the N–I–P structure. The incorporation of tungsten in the oxide layer led to a power conversion efficiency (PCE) increase from 8.23% to 16.05% due to the enhanced electron transfer and reduced back-recombination. Scanning electron microscope (SEM) images reveal that relatively large grain sizes in the perovskite phase with small grain boundaries were formed when the perovskite was deposited on tungsten-doped films. This study demonstrates that novel metal oxides can be used as in perovskite devices as electron transfer layers to improve the efficiency.
Highlights
Organic–inorganic perovskite solar cells (PSCs) are viewed as promising next-generation optoelectronic devices due to their superior optical and electrical properties, simple solution handling and low cost [1,2,3,4,5]
We have introduced an effective way to improve the performance of N–I–P PSCs with a new series of composite metal oxides as electron-transport layers
These composite electrodes give rise to enhanced injection and extraction of photogenerated electrons, avoiding the accumulation of electrons at the electron-transport layer (ETL)/perovskite interface, which in turn leads to a remarkable increase in JSC, VOC and fill factor (FF), and stability of PSCs
Summary
Organic–inorganic perovskite solar cells (PSCs) are viewed as promising next-generation optoelectronic devices due to their superior optical and electrical properties, simple solution handling and low cost [1,2,3,4,5]. Reports of new metal oxide-based PSCs have demonstrated that PCEs in the range of 15~20% are possible via development and optimization of new oxide layers [22,23,24,25,26,27,28,29,30]. These inorganic oxides are considered excellent interfacial materials due to their superior stability and electrical properties. To the best of our knowledge, this constitutes the highest performance yet reported for devices based on W oxides and demonstrates the great potential of this new material as ETLs for PSCs and for other potential applications [42,43]
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