Tungsten dopant incorporation for bandgap and type engineering of perovskite crystals

Abstract

Organic–inorganic hybrid halide perovskites have shown to be viable semiconductor materials, as the absorber layer of solar cells. Unfortunately, the polycrystalline qualities of perovskite films result in nonuniform coverage or a high recombination rate, which weakens the photoelectric capabilities of thin films. Here, the pure and tungsten (W)-doped methylammonium lead bromide (CH3NH3PbBr3 or MAPbBr3) films are deposited to FTO-glass substrates using the sol–gel spin coating method. The W-doping causes the nucleation and crystallization processes, which then have an impact on the film’s characteristics. It is discovered that the introduction of tungsten metal significantly enhances the quality of the perovskite film, resulting in larger grain sizes, lower band gap energy, and shorter recombination lifetimes, increasing the power conversion efficiency of perovskite thin film solar cells.