Abstract
After chemical mechanical polishing (CMP) of oxides became a standard method for global planarization, the polishing of metals is now being embraced by manufacturing. Although tungsten CMP has been used for subhalf‐micron technologies for quite some time, there is still a lack of theoretical understanding and modeling of the metal CMP processes. This paper presents a mathematical approach to describe erosion and dishing for tungsten CMP. The model, which represents the pad by a network of springs, simulates the profile of a dished tungsten line. The calculated data are then compared with experimental data.
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