Abstract

An optical device configuration allowing efficient electrical tuning of near total optical absorption in monolayer graphene is reported. This is achieved by combining a two-dimensional gold coated diffraction grating with a transparent spacer and a suspended graphene layer to form a doubly resonant plasmonic structure. Electrical tuneability is achieved with the inclusion of an ionic gel layer which plays the role of the gate dielectric. The underlying grating comprises a 2-dimensional array of inverted pyramids with a triple layer coating consisting of a reflective gold layer and two transparent dielectric spacers, also forming a vertical micro-cavity known as a Salisbury screen. Resonant coupling of plasmons between the gold grating and graphene result in strong enhancement of plasmon excitations in the atomic monolayer. Plasmon excitations can be dynamically switched off by lowering the chemical potential of graphene. Very high absorption values for an atomic monolayer and large tuning range, extremely large electrostatically induced changes in absorption over very small shifts in chemical potential are possible thus allowing for very sharp transitions in the optical behavior of the device. Overall this leads to the possibility of making electrically tunable plasmonic switches and optical memory elements by exploiting slow modes.

Highlights

  • Graphene is an atomic monolayer consisting of carbon atoms tightly packed in a two-dimensional honeycomb lattice

  • The sharp diagonal curved line which has a strong dependence on the chemical potential of the graphene layer is due a plasmon mode excited in graphene

  • The combination of a two-dimensional diffraction grating with a hybrid gold-insulator-graphene multilayer setup forms a doubly resonant plasmonic structure providing strong absorption enhancement in the graphene film

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Summary

Introduction

Graphene is an atomic monolayer consisting of carbon atoms tightly packed in a two-dimensional honeycomb lattice. Using an ionic gel as the top dielectric overcoat material in a gate setup[28, 29] enables strong modulation of the chemical potential at low voltage operation (from 0 eV up to 0.8 eV within 3 V of applied voltage)[30] providing a wide wavelength tuning range for plasmon excitations in the graphene layer.

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