Abstract
Oxide semiconductors with high expectations are regarded as the best candidate in the next generation thin film transistors. Flexible structure endows perovskite oxide semiconductors with the potential to satisfy different application requirements. In this letter, LaFeO3 epi-films (epitaxial films) were deposited on Nd-SrTiO3 to construct p-n junctions. The junctions show distinct rectification characteristic with a high rectification ratio of ~5 × 103 at ±2 V. Through annealing in deficient oxygen ambience, changes in LaFeO3 structure by introducing oxygen vacancies lead to the different turn-on voltages. Confirmed by XPS data, oxygen vacancies result in the slight reduction of Fe3+ to Fe2+ and the increase in holes concentration. Simultaneously, the location of Fermi Level shifts toward the top of valance band and barrier height for carriers increases gradually. Correspondingly, the turn-on voltage increases as lowering anneal oxygen pressure.
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