Abstract
AbstractA direct coupling of antiferroelectric (AFE) and resistive switching (RS) is realized for the first time in an oxide heterostructures (non‐tunneling mechanisms). This allows the resistance of the heterostructure to switch between volatile and non‐volatile RS behavior, which indicates a threshold RS and broadly increases its practical applicability. The stacks of Pt/PbZrO3 (PZO)/LaNiO3/SrTiO3 (STO) is fabricated by laser pulse deposition. It exhibits a tunable RS behavior from volatile to nonvolatile through adjusting voltage amplitude. Moreover, a high ON/OFF ratio, good retention, and endurance characteristics are achieved. Furthermore, synaptic behaviors related to neural learning functions in PZO film is explored, that is, long‐term potential/depression, spike timing dependent plasticity, and paired pulse facilitation. This work provides a way to engineer AFE and RS pertinent functionality for the low‐energy‐consumption, non‐volatile neural computing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
