Abstract
The electronic band structure and valley splitting of monolayer H-HfI2 and H-HfI2/T-VBrCl heterostructure have been investigated by first principles calculations. The monolayer H-HfI2 exhibits valleytronic feature at K and K’ points of the valence bands. The valley polarization in monolayer H-HfI2 arises from the magnetic proximity effect induced by T-VBrCl monolayer. The stacking configurations have a significant influence on the valley polarization of the H-HfI2/T-VBrCl heterostructure. The maximum valley polarization can be as high as −20 meV. It is possible to manipulate the magnitude of valley polarization by adjusting the layer spacing and applying biaxial strain. The Berry curvature between two valleys indicates that the H-HfI2/T-VBrCl heterostructure should be a potential candidate for valleytronic devices.
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