Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications

Abstract

We successfully fabricated ferroelectric-gate field effect transistor (FEFET)-based nonvolatile memory devices using an n-type Si nanowire coated with omega-shaped-gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) via a low-temperature fabrication process. Our FEFET memory devices with controllable threshold voltage via adjustment of the doping concentration exhibit excellent memory characteristics with ultra-low ON state power dissipation (≦̸3 nW), a large modulation in channel conductance between the ON and OFF states exceeding 105, a long retention time of over 3 × 104 s and a high endurance of over 105 programming cycles whilst maintaining an ION/IOFF ratio higher than 103. This result may be promising for next-generation nonvolatile memory on flexible substrate applications.