Abstract
High absorption efficiency is particularly desirable for various microtechnological applications. In this paper, a nearly perfect terahertz absorber for transverse magnetic (TM) polarization based on T-shaped InSb array is proposed and numerically investigated. Incident wave at the Fabry-Perot resonant frequency can be totally absorbed into the narrow grooves between the two adjacent T-shaped InSb arms. The absorption mechanism is theoretically and numerically studied by using the Fabry-Perot model and the finite element method (FEM), respectively. It is found that the proposed absorber has large angle tolerance. Moreover, the absorption peak can be controlled by varying the temperature. Furthermore, a new absorption peak will emerge while breaking the symmetry of the T-shaped InSb array. This tunable and angle-independent THz perfect absorber may find important applications in THz devices such as microbolometers, coherent thermal emitters, solar cells, photo detectors, and sensors.
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