Abstract
We demonstrate terahertz (THz) split-ring resonator (SRR) designs with incorporated germanium telluride (GeTe) thin films. GeTe is a chalcogenide that undergoes a nonvolatile phase change from the amorphous to crystalline state at approximately 200 °C, depending on the film thickness and stoichiometry. The phase change also causes a drop in the material's resistivity by six orders of magnitude. In this study, two GeTe-incorporated SRR designs were investigated. The first was an SRR made entirely out of GeTe and the second was a gold SRR structure with a GeTe film incorporated into the gap region of the split ring. These devices were characterized using THz time-domain spectroscopy and were heated in-situ to determine the change in the design operation with varying temperatures.
Highlights
We demonstrate terahertz (THz) split-ring resonator (SRR) designs with incorporated germanium telluride (GeTe) thin films
The first was an SRR made entirely out of GeTe and the second was a gold SRR structure with a GeTe film incorporated into the gap region of the split ring
The utilization of metamaterials is an interesting and promising approach, especially because subwavelength periodic structures needed to make metamaterials for THz wavelengths of $100 lm can be made with integrated circuit (IC) and microelectromechanical systems (MEMS) fabrication technologies
Summary
(Received 23 March 2016; accepted 23 May 2016; published online 6 June 2016) We demonstrate terahertz (THz) split-ring resonator (SRR) designs with incorporated germanium telluride (GeTe) thin films.
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