Abstract
We investigate the influence of spin-valley polarized transport channel (SVPTC) mismatch modulated by the perpendicular electric field and the exchange field in a silicene-based ferromagnet/ferromagnet/superconductor junction and the barrier strength in a ferromagnet/insulator/ferromagnet/superconductor junction. In the former junction, due to the mismatch of SVPTC caused by the different electric fields applied in the two ferromagnet (F) layers, the zero-bias Andreev reflection and zero-bias conductance peak (ZBCP) are suppressed. Moreover, by shifting the band, the exchange field can lead to the different mismatch of SVPTC between the two F layers with opposite magnetization orientations, and thus, the conversion from ZBCP to a zero-bias conductance valley can be observed. For the latter junction, due to the electrically tunable SVPTC, the phase shift of conductance oscillation with barrier strength is created by changing the electric field but not by altering the exchange field. Particularly, for the variation from the parallel to the antiparallel magnetic configuration, there is a phase shift π/2 of conductance vs the barrier strength.
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