Abstract
AbstractIn this paper, we calculate the spin‐dependent ballistic transport through a two‐dimensional electron gas (2DEG) heterostructure sandwiched between two ferromagnetic metal (FM) layers. A strong spin‐injection effect is predicted when the magnetization directions of two FM layers are antiparallel. The spin‐injection rate can be tuned by both, applied voltage and magnetic field. The device also exhibits a significant magnetoconductance (MC) when the relative magnetization of FM layers is switched, which functions as a spin‐valve (SV). Using a GaAs system as a 2DEG material in our calculation, the MC can be tuned by both the applied voltage and the magnetic field, and reaches up to as high as 37.5%. The device's dual spin‐valve and spin‐injector characteristics open the possibility for spin electronic and sensor applications in semiconductor based systems.
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