Abstract

We theoretically investigate a tunable δ-potential effect on a spin spatial splitter, which can be realized experimentally by depositing a ferromagnetic stripe with a vertical magnetization on top of semiconductor heterostructure and using atomic-layer doping technique. With the help of stationary phase method, the δ-doping dependent spin-polarized lateral displacement is numerically calculated by means of the improved transfer-matrix technique. Both amplitude and sign of the spin polarized lateral displacement are found to vary dramatically with the weight and/or location of the δ-doping. Thus, a structurally tunable spin spatial splitter can be achieved for spintronic applications.

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