Abstract
We report on the tuning of the spectral response of superlattice (SL) diodes based on dilute nitride Ga(AsN) alloys by post-growth hydrogenation. Hydrogen is incorporated into the superlattice where it neutralizes the electronic activity of nitrogen by forming N-H complexes. We exploit the controlled thermal dissociation of the complexes to tune the energy of the SL photocurrent absorption and electroluminescence emission; also, by annealing a submicron spot with a focused laser beam we create a preferential path for the injection of carriers, thus activating a nanoscale light emitting region. This method can be used for fabricating planar diode arrays with distinct optical active regions, all integrated onto a single substrate.
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