Abstract
Full ferroelastic and simultaneously ferroelectric materials are interesting candidates for applications in devices based on multiferroic heterostructures. They should allow for non-volatile and low-power writing of data bits in magnetoelectric random access memories. Moreover, ferroelasticity, in contrast to piezoelectric material, make magnetic information in ferromagnetic film resistant to external fields. As an example for such a system, we have studied the magnetoelastic interaction between a thin ferromagnetic layer of with a full ferroelastic–ferroelectric gadolinium molybdate crystal. We have investigated the influence of spontaneous strain onto magnetic properties of thin ferromagnetic film. Particularly, we have shown by Brillouin spectroscopy, that it is possible to modulate surface spin wave frequency of by spontaneous strain of gadolinium molybdate substrate.
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