Abstract
Intrinsic monolayer graphene has no band gap between its conduction and valence bands, which limits its application in many aspects as a semiconductor. Antidot lattices by constructing periodic holes on graphene have been proved to be an intriguing strategy to introduce a band gap into graphene. Here we used the e-beam lithography (EBL) combined with the oxygen reactive ion etching (RIE) to fabricate tunable antidot lattices with different and uniform regularly spaced holes on graphene. In this way, tunable periodic graphene nanostructures with the dimensions ranging from ∼20 nm to several hundreds of nanometers can be fabricated by controlling exposure dose and etching time.
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