Abstract
A diode is fabricated using poly(3,4‐ethylenedioxythiophene) doped with poly(styrene sulfonic acid) (PEDOT‐PSS) and n‐doped Si. Using an ionic liquid (IL) gel as the gate dielectric, the diode rectification ratio is tunable up to four orders of magnitude at very low operating voltages. Both p–n and Schottky type diodes are observed in the same device depending on the polarity of the gate voltage. IL‐gated electrostatic/electrochemical doping in PEDOT‐PSS is believed to be responsible for this switch. The turn‐on voltage in the first quadrant of the current–voltage (I–V) curve for the p–n diode is in the range 0.2–0.4 V. The Schottky diode operates in the third quadrant. This is the first report on a tunable diode using an IL to control its operation, and the low operating voltages make these diodes excellent candidates for use in reduced power consumption electronics.
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