Tunable Non-linear Optical, Semiconducting and Dielectric Properties of In1−xMnxSe Thin Films

Abstract

In1−xMnxSe (x = 0, 0.05, 0.1 and 0.15) thin films were evaporated by using the thermal evaporation technique. Both dispersion energy (Ed) and oscillating energy (Eo) were determined. The values of lattice dielectric constant (eL) and free carrier concentration/effective mass) (N/m*) were calculated. On the other hand, the values of the first order of moment (M−1), the third order of moment (M−3) and static refractive index (no) were determined. The dielectric loss (e′) and dielectric tangent loss (e″) for these films increased with photon energy and had the highest value near the energy gap Eg. Also, the same behavior was noticed for the real part of optical conductivity (σ1) and imaginary part of optical conductivity (σ2), the relation between Volume Energy Loss Function (VELF) and Surface Energy Loss Function (SELF) was determined. The Linear optical susceptibility (χ(1)) increased with photon energy for all compositions. The nonlinear optical parameters such as nonlinear refractive index (n2), the third-order nonlinear optical susceptibility (χ(3)) and non-linear absorption coefficient (βc), were determined theoretically. Both the electrical susceptibility (χe) and relative permittivity (er) increased with photon energy and had the highest value near the energy gap. The semiconducting results such as density of the valence band, conduction band, and Fermi level position (Ef) were calculated.