Abstract
The characteristic of specifically tunable negative differential resistance (NDR) of single-electron transistor (SET) controlled by capacitance which is noted accidentally in our experiment is studied in this paper. Tunable NDR of SET controlled by single source, drain and gate capacitances are simulated, respectively, then it is also done by controlling more than one capacitance. From the simulation results, it is seen that NDR of SET can be modulated by changing the value of capacitance of SET. Moreover, the cause of the phenomenon of tunable NDR of SET controlled by capacitance is given a qualitative analysis based on macro model.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
