Abstract
The absorption properties of a simple layered heterostructure composed of semiconductor and dielectric are analyzed by transfer matrix method. The numerical results indicate that such a structure can serve as a tunable multi-band terahertz perfect absorber. This phenomenon is due to the photon localization in the semiconductor layer at particular wavelengths and the presence of the damping factor of semiconductor layer. The number of the absorption peaks can be tuned by changing the thickness of the semiconductor layer. Moreover, the influences coming from the incident angle and the temperature of semiconductor on the absorption properties are also numerically studied.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
