Abstract
CsPbI3 with suitable bandgap (∼1.73 eV) and excellent photoelectric performance are considered promising candidates for new-generation photovoltaic and photoelectric devices. However, the phase instability of CsPbI3 hinders its application in photoelectric devices. In this study, cubic phase CsPbI3 nano-bricks with high stability are prepared on Si substrates by catalyst-freehigh-pressure pulsedlaser deposition.Theeffectsofthetarget-substrate distance on the morphological, structural and photoluminescence propertiesofCsPbI3 nano-bricks are investigated. CsPbI3 nano-bricks exhibits excellent long-term stability for 12 months, which can be attributed to the smaller lattice mismatch between Si (100) and CsPbI3 (100). Furthermore, the photodetector based on CsPbI3/n-Si heterojunction exhibited obvious spectral response in the red band of 710 nm. This work provides a novel idea for the preparation of photoelectric devices with cubic CsPbI3.
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