Tunable inversion degree of MnIn2S4 thiospinels prepared by high-pressure synthesis, and its implication in the optical and magnetic properties

Abstract

Indium thiospinels (AIn2S4, A= transition metals) have attracted significant attention due to their potential for manipulating magnetic and optoelectronic properties through changes in chemical composition. Defined in the cubic space group Fd-3 m (No. 227), the crystal structure consists of a framework of edge-sharing InS6 octahedra (Oh symmetry), with A cations coordinated tetrahedrally (Td symmetry) to sulfur. In this study, we describe a rapid high-pressure synthetic method (3.5 GPa) to prepare MnIn2S4 polycrystalline samples, with tunable degree of inversion (λ) or Mn-In antisite, meaning that some Mn occupy the octahedral sites and some In atoms are located at the tetrahedral positions. We found that λ closely depends on the synthesis temperature. Notably, the refinement of the crystal structure from X-ray diffraction data reveals positive correlations between the inversion degree and different properties such as the band gap, expanding its spectral coverage, and the magnetic behavior, depending on the occupancy rate of the octahedral or tetrahedral sites by the strongly magnetic Mn2+ ions. Whereas the paramagnetic behavior is not affected by the inversion degree, for higher λ values (30%<λ < 38%), achieved at synthesis temperatures as high of 800ºC, the random distribution of Mn2+ ions between Td and Oh sites accounts for a spin-glass state with a clear cusp in the magnetic susceptibility (ac and dc), based on the strong short-range antiferromagnetic interactions.