Abstract
A bandgap and intersublevel spacing tuned laser has been realized by using a modulation C-doped InGaAs∕GaAs quantum dot structure, which utilizes a postgrowth annealing process. The intermixed laser exhibits comparable light-current characteristics, indicating little detrimental change to the quantum dot laser material, and show a ground state bandgap blueshift of ∼13nm and intersublevel energy spacing reduction of ∼30nm compared to the unannealed device. The differences in the samples during annealing are attributed to the suppression of Ga vacancy propagation for samples with modulation C doping.
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