Tunable flux‐controlled floating memristor emulator circuits

Abstract

This study proposes two new emulator circuits of floating (grounded) flux-controlled incremental/decremental memristor, based on modified z -copy current–voltage differencing transconductance amplifier (VDTA). The circuits use only one VDTA as an active element, a single grounded capacitor and a variable number of grounded resistors, which benefit from the integrated circuit. Furthermore, it can utilise metal–oxide–semiconductor (MOS) capacitance instead of the external capacitor in the circuit. It does not consist of any multiplication circuit block to obtain non-linear behaviour of the memristor. The parameters of the proposed memristor emulator can be tuned electronically by changing the biasing current of the VDTA. Change of the transconductance gain of the VDTA provides an advantage in the form of the externally controllable memristor. Through the simulation program with integrated circuit emphasis (SPICE) simulation which was carried out on the basis of 0.18 μm complementary MOS technology and experimental results using two MAX435 commercial devices as an active element, all theoretical assumptions and conclusions were reached in different operating frequencies, the capacitance value and process corner. The simulation test results have shown that the maximum frequency is 50 MHz.