Abstract
Quantum dots realized in InAs are versatile systems to study the effect of spin–orbitinteraction on the spin coherence, as well as the possibility to manipulate single spins usingan electric field. We present transport measurements on quantum dots realized in InAsnanowires. Lithographically defined top gates are used to locally deplete the nanowire andto form tunnelling barriers. By using three gates, we can form either single quantum dots,or two quantum dots in series along the nanowire. Measurements of the stability diagramsfor both cases show that this method is suitable for producing high quality quantum dotsin InAs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
