Abstract
Quantum dots realized in InAs are versatile systems to study the effect of spin–orbitinteraction on the spin coherence, as well as the possibility to manipulate single spins usingan electric field. We present transport measurements on quantum dots realized in InAsnanowires. Lithographically defined top gates are used to locally deplete the nanowire andto form tunnelling barriers. By using three gates, we can form either single quantum dots,or two quantum dots in series along the nanowire. Measurements of the stability diagramsfor both cases show that this method is suitable for producing high quality quantum dotsin InAs.
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