Abstract
Co2FeSi film is potential in the spintronics applications, due to its low damping factor, which is reflected in the ferromagnetic resonance behavior. In this work, we demonstrate that the ferromagnetic resonance behavior in Co2FeSi film can be well engineered by post-annealing. After 450 °C post-annealing for 1 hour, the Gilbert damping factor decreases drastically from 0.039 at as-deposited state to 0.006, and the inhomogeneity contribution of ferromagnetic resonance linewidth decreases to 60.5 Oe. These decreases are ascribed to the crystallization of film from amorphous state to an ordered B2 phase. Higher annealing temperature, however, leads to the formation of the A2 phase with higher atomic disorder, instead of B2 phase, and brings about the increase of Gilbert damping.
Highlights
The research emphasis of the generation spintronics applications has been put on the electrical manipulation of magnetism related devices, such as spin transfer torque magnetoresistive random access memories (STT-MRAM), due to their low current requirement and reduced cost compared to the traditional spintronics devices.[1,2,3]
We demonstrate that the ferromagnetic resonance (FMR) behavior in Co2FeSi film can be well engineered by post-annealing
It is well known that the FMR linewidth of thin films has three main contributions: (1) inhomogeneity term (∆Hinh) which is independent of frequency, (2) Gilbert damping term (∆HGil) which is intrinsic in nature and
Summary
The research emphasis of the generation spintronics applications has been put on the electrical manipulation of magnetism related devices, such as spin transfer torque magnetoresistive random access memories (STT-MRAM), due to their low current requirement and reduced cost compared to the traditional spintronics devices.[1,2,3] For the realization of high density STT-MRAM, it is essential to reduce their critical switching current density,[3] which is proportional to the damping factor and can be reduced by increasing spin polarization of magnetic layers in the STT-MRAM.[4]. Researchers have been performing continuous studies on Co2FeSi, and one major focus is to decrease its procession damping factor, which can be reflected from its ferromagnetic resonance (FMR) behavior.[10,11,12]. We demonstrate that the FMR behavior in Co2FeSi film can be well engineered by post-annealing. After 450 ◦C post-annealing for 1 hour, the Gilbert damping factor decreases drastically from 0.039 at as-deposited state to 0.006. The decrease of Gilbert damping is ascribed to the crystallization of film from amorphous state to an ordered B2 phase. Leads to the formation of the A2 phase with higher atomic disorder, instead of B2 phase, and bring about the increase of Gilbert damping
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