Abstract
We study the electronic transport through an AA-stacked bilayer graphene with magnetic and electric barriers when an external electric field is applied perpendicularly to the graphene plane. The tunneling probability is found to be highly sensitive with respect to the incident angle of Dirac electrons, magnetic barrier strength, and biased potential between the two graphene layers. We also demonstrate that the electronic conductance across such a barrier structure can change from an oscillatory to a monotonically decaying function of the barrier width beyond a critical magnetic field, and further can be effectively modified by the electrical potential difference between the layers. It is possible to achieve conduction modulation in the AA-stacked bilayer graphene with configurable magnetoelectric barriers and to realize a field-induced switching by means of the combination of the magnetic and electric fields.
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